zno based saw device Search Results


zno/glass saw devices  (AGC Inc)
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zno-based rram device  (COMSOL Inc)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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gan and zno-based materials and devices  (Verlag GmbH)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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zno based saw device  (COMSOL Inc)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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zno/diamond saw devices  (Verlag GmbH)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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memristive devices based on solution-processed zno nanocrystals  (Verlag GmbH)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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zno based resistive random access memory device  (IEEE Access)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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zno-based misfet devices  (Corning Life Sciences)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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k-doped zno based p-dsc sample (device b)  (Verlag GmbH)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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zno-based optoelectronic devices  (Verlag GmbH)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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zno nanostructure-based quartz crystal microbalance device  (II-VI Inc)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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zno based devices  (Techna Group SRL)
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The capacitor-like structure of an <t>RRAM</t> <t>device.</t>
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Image Search Results


The capacitor-like structure of an RRAM device.

Journal: Materials

Article Title: Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

doi: 10.3390/ma15031205

Figure Lengend Snippet: The capacitor-like structure of an RRAM device.

Article Snippet: The simulation results of the ZnO-based RRAM device were obtained from the COMSOL Multiphysics, and the device structure is shown in .

Techniques:

Typical bipolar switching (I-V) curve, similar to the one obtained in the TiN/ZnO/Pt device under sweeping mode , and schematic of the processes ( a – d ) during the formation and dissociation of CF in RRAM . From the inset: ( a ) shows the formation of cylindrical CF after the applied positive bias as a SET process; ( b ) shows when the device is ON/LRS, and the blue arrows depict the generated radial electric field within the device vicinity; ( c ) shows when the device gained opposite polarity, and the red arrows depict the unfavorable states as a RESET process; and ( d ) shows when the device is transformed to an insulating state (after the dissociation of CF) OFF/HRS. Note: the inset and the pictures are arranged in the SET to RESET processes’ cycle (cycling along ( a – d )).

Journal: Materials

Article Title: Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

doi: 10.3390/ma15031205

Figure Lengend Snippet: Typical bipolar switching (I-V) curve, similar to the one obtained in the TiN/ZnO/Pt device under sweeping mode , and schematic of the processes ( a – d ) during the formation and dissociation of CF in RRAM . From the inset: ( a ) shows the formation of cylindrical CF after the applied positive bias as a SET process; ( b ) shows when the device is ON/LRS, and the blue arrows depict the generated radial electric field within the device vicinity; ( c ) shows when the device gained opposite polarity, and the red arrows depict the unfavorable states as a RESET process; and ( d ) shows when the device is transformed to an insulating state (after the dissociation of CF) OFF/HRS. Note: the inset and the pictures are arranged in the SET to RESET processes’ cycle (cycling along ( a – d )).

Article Snippet: The simulation results of the ZnO-based RRAM device were obtained from the COMSOL Multiphysics, and the device structure is shown in .

Techniques: Generated, Transformation Assay